Thermal stability study of Si cap/ultrathin Ge/Si and strained Si/Si1-xGex/Si nMOSFETs with HfO2gate dielectric

Thermal stability study of Si cap/ultrathin Ge/Si and strained Si/Si1-xGex/Si nMOSFETs with HfO2gate dielectric

10.1088/0268-1242/21/5/017

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書目詳細資料
Main Authors:	Yeo, C.C., Cho, B.J., Lee, M.H., Liu, C.W., Choi, K.J., Lee, T.W.
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Article
出版:	2011
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/25762
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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