Monte Carlo simulations of strained Si/SiGe-OI nMOSFETs
The motivation for research into n-type strained-Si/SiGe-on-insulator metal-oxide field effect transistors (SiGe-OI MOSFETs) is to take advantage of both the enhancement of electron transport properties due to strain and the mass production of advanced CMOS technology. Two dimensional self-consisten...
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| Main Authors: | , |
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| Format: | Conference or Workshop Item |
| Published: |
2018
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| Online Access: | https://repository.li.mahidol.ac.th/handle/123456789/23236 |
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