CMOS devices - Silicon-on-insulator and multi-gate devices

CMOS devices - Silicon-on-insulator and multi-gate devices

10.1109/IEDM.2006.346921

Saved in:

書目詳細資料
主要作者:	Yeo, Y.-C.
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Editorial
出版:	2014
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/68486
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

相似書籍

Laser thermal processing of amorphous silicon gates to reduce poly-depletion in CMOS devices
由: Chong, Y.F., et al.
出版: (2014)

Fabrication, characterization, and modeling of silicon multi-gate devices
由: ZHAO HUI
出版: (2010)

Ultra-narrow silicon nanowire gate-all-around CMOS devices: Impact of diameter, channel-orientation and low temperature on device performance
由: Singh, N., et al.
出版: (2014)

Impact of metal gate work function on nano CMOS device performance
由: Hou, Y.T., et al.
出版: (2014)

Novel polarization-diversity devices on a silicon-on-insulator platform.
由: GUAN HANG
出版: (2014)

Gallium nitride based optoelectronic devices on silicon-on-insulator substrates
由: Lin, Kaixin
出版: (2012)

Selected topics on HfO 2 gate dielectrics for future ULSI CMOS devices
由: Li, M.F., et al.
出版: (2014)

Method of fabricating a CMOS device with dual metal gate electrodes
由: PARK, CHANG SEO, et al.
出版: (2012)

HfO2 gate dielectrics for future generation of CMOS device application
由: Yu, H.Y., et al.
出版: (2014)

Hf-based high-K gate dielectric and metal gate stack for advanced CMOS devices
由: JOO MOON SIG
出版: (2010)

Hf-based high-K gate dielectric on high mobility channel for advanced CMOS devices
由: YEO CHIA CHING
出版: (2010)

The partial silicon-on-insulator technology for RF power LDMOSFET devices and on-chip microinductors
由: Ren, C., et al.
出版: (2014)

Metal carbides for band-edge work function metal gate CMOS devices
由: Hwang, W.S., et al.
出版: (2014)

Advanced channel and contact technologies for future CMOS devices
由: Yeo, Y.-C.
出版: (2014)

Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimization
由: Toh, E.-H., et al.
出版: (2014)

Cmos gate architecture for integration of salicide process in sub 0.1. .muM devices
由: HO, CHAW SING, et al.
出版: (2012)

Device design and scalability of a double-gate tunneling field-effect transistor with silicon - germanium source
由: Toh, E.-H., et al.
出版: (2014)

Thermally Robust High Quality HfN/HfO 2 Gate Stack for Advanced CMOS Devices
由: Yu, H.Y., et al.
出版: (2014)

Two dimensional materials-based multi gated devices and simulation
由: An, Yicheng
出版: (2022)

Reliability modeling of ultra-thin gate oxide and high-k dielectrics for nano-scale CMOS devices
由: LOH WEI YIP
出版: (2010)

High performance metal-gate/high-κ MOSFETs and GaAs compatible RF passive devices on Ge-on-insulator technology
由: Chin, A., et al.
出版: (2014)

Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction
由: Toh, E.-H., et al.
出版: (2014)

SRAM devices and circuits optimization toward energy efficiency in multi-Vth CMOS
由: Wang, Bo, et al.
出版: (2015)

Hardware acceleration of neural networks with CMOS and post-CMOS devices
由: Govind Narasimman
出版: (2017)

Novel devices for enhanced CMOS performance
由: CHUI KING JIEN
出版: (2011)

Simulation of multiple gate FinFET device gate capacitance and performance with gate length and pitch scaling
由: Zhao, H., et al.
出版: (2014)

Characteristics of GaAs MISFET devices using low-temperature-grown Al0.3Ga0.7As as gate insulator
由: Rao, R.V.V.V.J., et al.
出版: (2014)

Analysis of high-dielectric constant gate stack reliability for nanoscale CMOS devices application via scanning tunneling microscopy
由: Ong, Yi Ching
出版: (2009)

Near-IR and mid-IR (1.55 μm – 2 μm) silicon photonics devices on silicon-on-insulator (SOI) platform
由: Zhang, Zecen
出版: (2018)

Zirconium dioxide as a gate dielectric in metal-insulator-silicon structures and current transport mechanisms
由: Ng, T.H., et al.
出版: (2014)

Silicon nanowires thermoelectric devices
由: Li, Y., et al.
出版: (2014)

Latchup analysis of deep submicrometer CMOS devices
由: Chen, Hong Lei.
出版: (2008)

0.13-micron CMOS device characterization
由: Lazuardi, Stephen
出版: (2008)

Advanced Materials And Novel Devices For CMOS Applications
由: WANG HUIQI GRACE
出版: (2010)

Selective EPI process for advanced CMOS devices
由: CHOI KYU JIN
出版: (2010)

Multi-layer high-κ interpoly dielectric for floating gate flash memory devices
由: Zhang, L., et al.
出版: (2014)

Work function tuning of metal nitride electrodes for advanced CMOS devices
由: Ren, C., et al.
出版: (2014)

Effect of fin doping concentration on the electrical characteristics of germanium-on-insulator multi-gate field-effect transistor
由: Liu, B., et al.
出版: (2014)

Epitaxial growth of single crystalline Ge films on GaAs substrates for CMOS device integration
由: Chin, H.-C., et al.
出版: (2014)

Reliability and characterization for deep sub-micron CMOS devices
由: CHEN GANG
出版: (2010)