Characteristics of GaAs MISFET devices using low-temperature-grown Al0.3Ga0.7As as gate insulator

• Main Authors: Rao, R.V.V.V.J., Chong, T.C., Lau, W.S., Tan, L.S., Lim, N.
• 其他作者: ELECTRICAL ENGINEERING
• 格式: Article
• 出版: 2014
• 主題: Field effect transistors; MISFET; Semiconductor devices
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/80317
• 機構: National University of Singapore

Electronics Letters