Study and characterization of low dielectric constant materials for interlayer dielectric applications

Study and characterization of low dielectric constant materials for interlayer dielectric applications

The properties of low-k SiCOH film deposited by plasma-enhanced chemical vapor deposition using trimethylsilane are reported here. The deposition process was performed at different temperatures form 200 to 400C. the influence of deposition temperature on the films were characterized using Fourier tr...

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書目詳細資料
主要作者:	Narayanan, Babu
其他作者:	Prasad, Krishnamachar
格式:	Theses and Dissertations
出版:	2008
主題:	DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
在線閱讀:	http://hdl.handle.net/10356/4535
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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