Characterization of ultrathin gate dielectric films

• المؤلف الرئيسي: Leong, Li Ying.
• مؤلفون آخرون: Chen, Tupei
• التنسيق: Theses and Dissertations
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/4596
• المؤسسة: Nanyang Technological University

This study reports on the effect of Fowler-Nordheim injection stress on the gate oxide above the channel and edge (gate/drain overlap) regions. Several methods for electrical characterization of the gate dielectric are used to study the types of charge trapping at the Si-SiO2 interface, channel and...