Fabrication of poly-Si TFT with silicided Schottky barrier source/drain, high-κ gate dielectric and metal gate

Fabrication of poly-Si TFT with silicided Schottky barrier source/drain, high-κ gate dielectric and metal gate

10.1016/j.sse.2005.11.001

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書目詳細資料
Main Authors: Zhu, S., Singh, J., Zhu, C., Du, A., Li, M.F.
其他作者: ELECTRICAL & COMPUTER ENGINEERING
格式: Article
出版: 2014
主題:
Low temperature process
Schottky barrier source/drain
Silicide
TFT
在線閱讀:http://scholarbank.nus.edu.sg/handle/10635/82338
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總結:10.1016/j.sse.2005.11.001

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