N-channel FinFETs with 25-nm gate length and Schottky-Barrier source and drain featuring Ytterbium silicide

• Main Authors: Lee, R.T.P., Lim, A.E.-J., Tan, K.-M., Liow, T.-Y., Lo, G.-Q., Samudra, G.S., Chi, D.Z., Yeo, Y.-C.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Article
• 出版: 2014
• 主題: FinFET; Multiple-gate transistor; Rare earth metal; Schottky; Silicide YbSi
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/82747
• 機構: National University of Singapore

10.1109/LED.2006.889233