Hot carrier degradation study in PMOSFET using gated-diode drain current and charge pumping measurements

Hot carrier degradation study in PMOSFET using gated-diode drain current and charge pumping measurements

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

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書目詳細資料
Main Authors:	Goh, Y.H., Ling, C.H.
其他作者:	ELECTRICAL ENGINEERING
格式:	Conference or Workshop Item
出版:	2014
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/72676
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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