Study and characterization of low dielectric constant materials for interlayer dielectric applications
The properties of low-k SiCOH film deposited by plasma-enhanced chemical vapor deposition using trimethylsilane are reported here. The deposition process was performed at different temperatures form 200 to 400C. the influence of deposition temperature on the films were characterized using Fourier tr...
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| 格式: | Theses and Dissertations |
| 出版: |
2008
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| 在線閱讀: | http://hdl.handle.net/10356/4535 |
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| 機構: | Nanyang Technological University |