Monte Carlo simulations of strained Si/SiGe-OI nMOSFETs

• المؤلفون الرئيسيون: A. Yangthaisong, T. Osotchan
• مؤلفون آخرون: Ubon Rajathanee University
• التنسيق: Conference or Workshop Item
• منشور في: 2018
• الموضوعات: Engineering
• الوصول للمادة أونلاين: https://repository.li.mahidol.ac.th/handle/123456789/23236
• المؤسسة: Mahidol University

The motivation for research into n-type strained-Si/SiGe-on-insulator metal-oxide field effect transistors (SiGe-OI MOSFETs) is to take advantage of both the enhancement of electron transport properties due to strain and the mass production of advanced CMOS technology. Two dimensional self-consisten...