Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon-carbon source/drain regions

Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon-carbon source/drain regions

10.1016/j.sse.2007.09.013

محفوظ في:

التفاصيل البيبلوغرافية
المؤلفون الرئيسيون:	Ang, K.-W., Chin, H.-C., Chui, K.-J., Li, M.-F., Samudra, G.S., Yeo, Y.-C.
مؤلفون آخرون:	ELECTRICAL & COMPUTER ENGINEERING
التنسيق:	مقال
منشور في:	2014
الموضوعات:	Ballistic efficiency Carrier backscattering Injection velocity Strain
الوصول للمادة أونلاين:	http://scholarbank.nus.edu.sg/handle/10635/82028
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!

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