Ang, K., Chin, H., Chui, K., Li, M., Samudra, G., Yeo, Y., & ENGINEERING, E. &. C. (2014). Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon-carbon source/drain regions.

Ang, K.-W., H.-C Chin, K.-J Chui, M.-F Li, G.S Samudra, Y.-C Yeo, و ELECTRICAL & COMPUTER ENGINEERING. Carrier Backscattering Characteristics of Strained Silicon-on-insulator N-MOSFETs Featuring Silicon-carbon Source/drain Regions. 2014.

Ang, K.-W., et al. Carrier Backscattering Characteristics of Strained Silicon-on-insulator N-MOSFETs Featuring Silicon-carbon Source/drain Regions. 2014.