Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon-carbon source/drain regions

Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon-carbon source/drain regions

10.1016/j.sse.2007.09.013

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書目詳細資料
Main Authors: Ang, K.-W., Chin, H.-C., Chui, K.-J., Li, M.-F., Samudra, G.S., Yeo, Y.-C.
其他作者: ELECTRICAL & COMPUTER ENGINEERING
格式: Article
出版: 2014
主題:
Ballistic efficiency
Carrier backscattering
Injection velocity
Strain
在線閱讀:http://scholarbank.nus.edu.sg/handle/10635/82028
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總結:10.1016/j.sse.2007.09.013

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