Hot-carrier induced degradation in the subthreshold characteristics of LDD PMOSFETs

Hot-carrier induced degradation in the subthreshold characteristics of LDD PMOSFETs

Proceedings of the International Symposium on the Physical 7 Failure Analysis of Integrated Circuits, IPFA

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書目詳細資料
Main Authors:	Lou, C.L., Chim, W.K., Chan, D.S.H., Pan, Y.
其他作者:	ELECTRICAL ENGINEERING
格式:	Conference or Workshop Item
出版:	2014
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/72677
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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