Experimentally-based analytical model of deep-submicron LDD pMOSFET’s in a Bi-MOS hybrid-mode environment

• المؤلفون الرئيسيون: Rofail, Samir S., Yeo, Kiat Seng
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2009
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/91739; http://hdl.handle.net/10220/4642

The hybrid-mode operation of deep-submicron LDD pMOSFET’s has been investigated experimentally. Based on the experimental results, analytical models for the threshold voltage, the device currents, the transconductance, and the output conductance were derived. The various current components in this m...