An extensive study on the boron junctions formed by optimized pre-spike∕multiple-pulse flash lamp annealing schemes : junction formation, stability and leakage

• المؤلفون الرئيسيون: Tan, Dexter Xue Ming, Pey, Kin Leong, Yeong, S. H., Colombeau, B., Poon, C. H., Mok, K. R. C., See, A., Benistant, F., Ng, C. M., Chan, L., Srinivasan, M. P.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2019
• الموضوعات: Flash Lamp Annealing; Boron; DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/83147; http://hdl.handle.net/10220/49113

In this work, the electrical activation of Boron in Germanium pre‐amorphized silicon substrate upon flash lamp annealing (FLA) is investigated. We demonstrate that FLA helps in the reduction of the EOR defects, resulting in minimal transient enhanced diffusion and dopant deactivation effect. It has...