Analytical damage tables for crystalline silicon

by Chan, H.Y., Benistant, F., Srinivasan, M.P., Erlebach, A., Zechner, C.
Published 2014

Sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300 keV using Monte Carlo simulations

by Chan, H.Y., Srinivasan, M.P., Benistant, F., Jin, H.M., Chan, L.
Published 2014

The impact of boron halo on phosphorus junction formation and stability

by Yeong, S.H., Colombeau, B., Mok, K.R.C., Benistant, F., Chan, L., Srinivasan, M.P.
Published 2014

Continuum modeling of post-implantation damage and the effective plus factor in crystalline silicon at room temperature

by Chan, H.Y., Srinivasan, M.P., Benistant, F., Mok, K.R., Chan, L., Jin, H.M.
Published 2014

Mechanism of stress memorization technique (SMT) and method to maximize its effect

by Pandey, S.M., Liu, J., Hooi, Z.S., Flachowsky, S., Herrmann, T., Tao, W., Benistant, F., See, A., Chu, S., Samudra, G.S.
Published 2014

Comprehensive model of damage accumulation in silicon

by Mok, K.R.C., Benistant, F., Jaraiz, M., Rubio, J.E., Castrillo, P., Pinacho, R., Srinivasan, M.P.
Published 2014

Phosphorus implant for S/D extension formation: Diffusion and activation study after spacer and spike anneal

by Yeong, S.H., Colombeau, B., Benistant, F., Srinivasan, M.P., Mulcahy, C.P.A., Lee, P.S., Chan, L.
Published 2014

Experimental and simulation study of the flash lamp annealing for boron ultra-shallow junction formation and its stability

by Mok, K.R.C., Yeong, S.H., Colombeau, B., Benistant, F., Poon, C.H., Chan, L., Srinivasan, M.P.
Published 2014

Bimodal distribution of damage morphology generated by ion implantation

by Mok, K.R.C., Jaraiz, M., Martin-Bragado, I., Rubio, J.E., Castrillo, P., Pinacho, R., Srinivasan, M.P., Benistant, F.
Published 2014

Comprehensive modeling of ion-implant amorphization in silicon

by Mok, K.R.C., Jaraiz, M., Martin-Bragado, I., Rubio, J.E., Castrillo, P., Pinacho, R., Srinivasan, M.P., Benistant, F.
Published 2014

Ion-implant simulations: The effect of defect spatial correlation on damage accumulation

by Mok, K.R.C., Jaraiz, M., Martin-Bragado, I., Rubio, J.E., Castrillo, P., Pinacho, R., Srinivasan, M.P., Benistant, F.
Published 2014

The effect of interatomic potential in molecular dynamics simulation of low energy ion implantation

by Chan, H.Y., Nordlund, K., Peltola, J., Gossmann, H.-J.L., Ma, N.L., Srinivasan, M.P., Benistant, F., Chan, L.
Published 2014

SDODEL MOSFET for performance enhancement

by Chui, K.J., Samudra, G.S., Yeo, Y.-C., Tee, K.-C., Leong, K.-W., Tee, K.M., Benistant, F., Chan, L.
Published 2014

Understanding of carbon/fluorine Co-implant effect on boron-doped junction formed during soak annealing

by Yeong, S.H., Colombeau, B., Mok, K.R.C., Benistant, F., Liu, C.J., Wee, A.T.S., Chan, L., Ramam, A., Srinivasan, M.P.
Published 2014

A novel CMOS compatible L-shaped impact-ionization MOS (LI-MOS) transistor

by Toh, E.-H., Wang, G.H., Lo, G.-Q., Balasubramanian, N., Tung, C.-H., Benistant, F., Chan, L., Samudra, G., Yeo, Y.-C.
Published 2014

The impact of nitrogen co-implantation on boron ultra-shallow junction formation and underlying physical understanding

by Yeong, S.H., Colombeau, B., Mok, K.R.C., Benistant, F., Liu, C.J., Wee, A.T.S., Dong, G., Chan, L., Srinivasan, M.P.
Published 2014

Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowth

by Mok, K.R.C., Colombeau, B., Jaraiz, M., Castrillo, P., Rubio, J.E., Pinacho, R., Srinivasan, M.P., Benistant, F., Martin-Bragado, I., Hamilton, J.J.
Published 2014

Molecular dynamics with phase-shift-based electronic stopping for calibration of ion implantation profiles in crystalline silicon

by Chan, H.Y., Nordlund, K., Gossmann, H.-J.L., Harris, M., Montgomery, N.J., Mulcahy, C.P.A., Biswas, S., Srinivasan, M.P., Benistant, F., Ng, C.M., Chan, L.
Published 2014

An extensive study on the boron junctions formed by optimized pre-spike∕multiple-pulse flash lamp annealing schemes : junction formation, stability and leakage

by Tan, Dexter Xue Ming, Pey, Kin Leong, Yeong, S. H., Colombeau, B., Poon, C. H., Mok, K. R. C., See, A., Benistant, F., Ng, C. M., Chan, L., Srinivasan, M. P.
Published 2019

Understanding of boron junction stability in preamorphized silicon after optimized flash annealing

by Yeong, S.H., Colombeau, B., Poon, C.H., Mok, K.R.C., See, A., Benistant, F., Tan, D.X.M., Pey, K.L., Ng, C.M., Chan, L., Srinivasan, M.P.
Published 2014