Characterization of thin-film GaAs diodes grown on germanium-on-insulator on Si substrate

• المؤلفون الرئيسيون: Chia, Ching Kean, Xu, Z., Yoon, S. F., Yeo, Y. C., Cheng, Y. B., Dalapati, G. K.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2014
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/79482; http://hdl.handle.net/10220/18862

In this study, we report the characterization of thin-film GaAsgrown on germanium-on-insulator (GeOI) on Si substrate. A GaAs/GeOI diode with a 600 nm buffer layer showed a rectification of 1.0 × 107 at ±2 V and had an electrical performance similar to that of the reference sample grown on GaAs subs...