Integration of TaOx-based resistive-switching element and GaAs diode

• المؤلفون الرئيسيون: Chi, Dong Zhi, Xu, Z., Tong, X., Yoon, S. F., Yeo, Y. C., Dalapati, G. K., Chia, Ching Kean
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2014
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/79340; http://hdl.handle.net/10220/19734

We report the integration of one selection diode and one resistive-switching memory element (1D1R) structure based on a GaAs diode on germanium-on-insulator on a Si substrate integrated with Cr/TaOx/Al memory element. The 1D1R device showed unipolar resistive-switching with an ON/OFF resistance rati...