InAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrates (GeOI) using molecular beam epitaxy

• المؤلفون الرئيسيون: Fitzgerald, Eugene A., Liang, Y. Y., Ngo, C. Y., Yoon, Soon Fatt, Loke, Wan Khai
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/105229; http://hdl.handle.net/10220/17644; http://dx.doi.org/10.1002/pssc.201100261
• المؤسسة: Nanyang Technological University

InAs/GaAs quantum dots (QDs) on GeOI were grown at various growth temperatures and in-depth photoluminescence study was conducted to characterize the optical properties of QDs on GeOI. InAs QDs with room temperature emission of 1.26 μm and areal density of 4.8 × 1010 cm-2 were obtained. It was shown...