Characteristics of InAs/InGaAs/GaAs QDs on GeOI substrates with single-peak 1.3 µm room-temperature emission

• المؤلفون الرئيسيون: Liang, Y. Y., Ngo, C. Y., Fitzgerald, Eugene A., Yoon, Soon Fatt, Loke, Wan Khai
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/95991; http://hdl.handle.net/10220/11368
• المؤسسة: Nanyang Technological University

GaAs-based quantum dot (QD) systems, especially InAs/InGaAs/GaAs QDs, have demonstrated superior device performances as compared with higher dimensional systems. However, to realize high-speed optical interconnects for Si-based electronics, one will need to grow the QDs on Si substrates. While it is...