Strain-enhanced luminescence from biaxially strained Ge light-emitting diodes on GeOI substrates

• Main Authors: Wan, Rongqiao, Zhang, Lin, Zhu, Yuanhao, Lee, Kwang Hong, Chen, Qimiao, Wan, Fengshuo, Wu, Shaoteng, Luo, Jun-wei, Tan, Chuan Seng
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2025
• 主題: Physics; Light emitting diodes; Electroluminescence
• 在線閱讀: https://hdl.handle.net/10356/183747
• 機構: Nanyang Technological University

Due to the lack of efficient light sources compatible with complementary metal oxide semiconductor technology, the development of silicon-based photonic integrated circuits has been restricted. Germanium (Ge), with its small bandgap difference between the direct and indirect valleys, becomes a promi...