A new method for enhancing high- k /metal-gate stack performance and reliability for high- k last integration

بواسطة Yew, K. S., Tang, L. J., Ang, Diing Shenp
منشور في 2013

Substituted aluminum metal gate on high-K dielectric for low work-function and fermi-level pinning free

بواسطة Park, C.S., Cho, B.J., Tang, L.J., Kwong, D.-L.
منشور في 2014

Impact of buried capping layer on TDDB physics of advanced interconnects

بواسطة Yiang, K.Y., Yoo, W.J., Krishnamoorthy, A., Tang, L.J.
منشور في 2014

Self-assembly of Al2O3 nanodots on SiO2 using two-step controlled annealing technique for long retention nonvolatile memories

بواسطة Chen, J.H., Yoo, W.J., Chan, D.S.H., Tang, L.-J.
منشور في 2014

Surface passivation using ultrathin AlN x film for Ge-metal-oxide-semiconductor devices with hafnium oxide gate dielectric

بواسطة Gao, F., Lee, S.J., Pan, J.S., Tang, L.J., Kwong, D.-L.
منشور في 2014

Improved electrical performance of Erbium silicide Schottky diodes formed by pre-RTA amorphization of Si

بواسطة Tang, L. J., Tan, Eu Jin, Pey, Kin Leong, Chi, Dong Zhi, Lee, Pooi See
منشور في 2012

Gate Dielectric-Breakdown-Induced Microstructural Damage in MOSFETs

بواسطة Tang, L.J., Pey, K.L., Tung, C.H., Radhakrishnan, M.K., Lin, W.H.
منشور في 2014

Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors

بواسطة Pey, K.L., Tung, C.H., Tang, L.J., Lin, W.H., Radhakrishnan, M.K.
منشور في 2014

Dual metal gate process by metal substitution of dopant-free polysilicon on high-K dielectric

بواسطة Park, C.S., Cho, B.J., Hwang, W.S., Loh, W.Y., Tang, L.J., Kwong, D.-L.
منشور في 2014

Study of surface passivation of strained indium gallium arsenide by vacuum annealing and silane treatment

بواسطة Chin, H.-C., Wang, B., Lim, P.-C., Tang, L.-J., Tung, C.-H., Yeo, Y.-C.
منشور في 2014

Gate dielectric degradation mechanism associated with DBIE evolution

بواسطة Pey, K.L., Ranjan, R., Tung, C.H., Tang, L.J., Lin, W.H., Radhakrishnan, M.K.
منشور في 2014

Geometry dependence of gate oxide breakdown evolution

بواسطة Sun, Y., Pey, K.L., Tung, C.H., Lombardo, S., Palumbo, F., Tang, L.J., Radhakrishnan, M.K.
منشور في 2014

Structural analysis of breakdown in ultrathin gate dielectrics using transmission electron microscopy

بواسطة Pey, K.L., Tung, C.H., Tang, L.J., Ranjan, R., Radhakrishnan, M.K., Lin, W.H., Lombardo, S., Palumbo, F.
منشور في 2014

Correlation between optical properties and Si nanocrystal formation of Si-rich Si oxide films prepared by plasma-enhanced chemical vapor deposition

بواسطة Chen, X.Y., Lu, Y.F., Wu, Y.H., Cho, B.J., Tang, L.J., Lu, D., Dong, J.R.
منشور في 2014

Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM

بواسطة Pey, K.L., Tung, C.H., Radhakrishnan, M.K., Tang, L.J., Sun, Y., Wang, X.D., Lin, W.H.
منشور في 2014

Structure of the breakdown spot during progressive breakdown of ultra-thin gate oxides

بواسطة Palumbo, F., Lombardo, S., Pey, K.L., Tang, L.J., Tung, C.H., Lin, W.H., Radhakrishnan, M.K., Falci, G.
منشور في 2014

Pulsed laser induced silicidation on TiN-capped Co/Si bilayers

بواسطة Chow, F. L., Lee, Pooi See, Pey, Kin Leong, Tang, L. J., Tung, Chih Hang, Wang, X. C., Lim, G. C.
منشور في 2012

Multiple-pulse laser thermal annealing for the formation of Co-silicided junction

بواسطة Lee, Pooi See, Pey, Kin Leong, Chow, F. L., Tang, L. J., Tung, Chih Hang, Wang, X. C., Lim, G. C.
منشور في 2012

Germanium p- & n-MOSFETs fabricated with novel surface passivation (plasma-PH 3 and thin AlN) and TaN/HfO 2 gate stack

بواسطة Whang, S.J., Lee, S.J., Gao, F., Wu, N., Zhu, C.X., Pan, J.S., Tang, L.J., Kwong, D.L.
منشور في 2014

A new breakdown failure mechanism in HfO 2 gate dielectric

بواسطة Ranjan, R., Pey, K.L., Tang, L.J., Tung, C.H., Groeseneken, G., Radhakrishnan, M.K., Kaczer, B., Degraeve, R., De Gendt, S.
منشور في 2014