Characterization of sputtered TiO2 gate dielectric on aluminum oxynitride passivated p-GaAs

بواسطة Dalapati, G.K., Sridhara, A., Wong, A.S.W., Chia, C.K., Lee, S.J., Chi, D.
منشور في 2014

Energy-band alignments of Hf O2 on p-GaAs substrates

بواسطة Dalapati, G.K., Oh, H.-J., Lee, S.J., Sridhara, A., Wong, A.S.W., Chi, D.
منشور في 2014

Interfacial characteristics and band alignments for Zr O2 gate dielectric on Si passivated p-GaAs substrate

بواسطة Dalapati, G.K., Sridhara, A., Wong, A.S.W., Chia, C.K., Lee, S.J., Chi, D.
منشور في 2014

Effects of AlAs interfacial layer on material and optical properties of GaAsGe (100) epitaxy

بواسطة Chia, C.K., Dong, J.R., Chi, D.Z., Sridhara, A., Wong, A.S.W., Suryana, M., Dalapati, G.K., Chua, S.J., Lee, S.J.
منشور في 2014

Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopy

بواسطة Oh, H.J., Lin, J.Q., Lee, S.J., Dalapati, G.K., Sridhara, A., Chi, D.Z., Chua, S.J., Lo, G.Q., Kwong, D.L.
منشور في 2014