Interface engineering for InGaAs n-MOSFET application using plasma PH 3-N2 passivation

由 Oh, H.-J., Suleiman, S.A.B., Lee, S.
出版 2014

High-k integration and interface engineering for III-V MOSFETs

由 Oh, H.J., Sumarlina, A.B.S., Lee, S.J.
出版 2014

The effect of interfacial layer of high-K dielectrics on GaAs substrate

由 Tong, Y., Dalapati, G.K., Oh, H.J., Cho, B.J.
出版 2014

Study on thermal stability of plasma-PH3 passivated HfAlO/In0.53Ga0.47 as gate stack for advanced metal-oxide-semiconductor field effect transistor

由 Suleiman, S.A., Oh, H.J., Du, A., Ng, C.M., Lee, S.J.
出版 2014

Energy-band alignments of Hf O2 on p-GaAs substrates

由 Dalapati, G.K., Oh, H.-J., Lee, S.J., Sridhara, A., Wong, A.S.W., Chi, D.
出版 2014

GaAs heteroepitaxy on SiGe-on-insulator using ge condensation and migration enhanced epitaxy

由 Oh, H.J., Choi, K.J., Loh, W.Y., Htoo, T., Chua, S.J., Cho, B.J.
出版 2014

Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques

由 Oh, H.J., Choi, K.J., Loh, W.Y., Htoo, T., Chua, S.J., Cho, B.J.
出版 2014

Plasma PH3-passivated high mobility inversion InGaAs MOSFET fabricated with self-aligned gate-first process and HfO2/TaN gate stack

由 Lin, J., Lee, S., Oh, H.-J., Yang, W., Lo, G.Q., Kwong, D.L., Chi, D.Z.
出版 2014

Novel approach of predicting fracture load in the human proximal femur using non-invasive qct imaging technique

由 Lee, T., Pereira, B.P., Chung, Y.-S., Oh, H.J., Choi, J.B., Lim, D., Shin, J.H.
出版 2014

Inversion-mode self-aligned In0.53Ga0.47 As N-channel metal-oxide-semiconductor field-effect transistor with HfAlO gate dielectric and TaN metal gate

由 Lin, J.Q., Lee, S.J., Oh, H.J., Lo, G.Q., Kwong, D.L., Chi, D.Z.
出版 2014

Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance

由 Loh, W.-Y., Zang, H., Oh, H.-J., Choi, K.-J., Nguyen, H.S., Lo, G.-Q., Cho, B.J.
出版 2014

Improved current drivability and gate stack integrity using buried SiC layer for strained Si/SiGe channel devices

由 Zang, H., Loh, W.Y., Oh, H.J., Choi, K.J., Nguyen, H.S., Lo, G.Q., Cho, B.J.
出版 2014

Thermally robust phosphorous nitride interface passivation for InGaAs self-aligned gate-first n-MOSFET integrated with high-k dielectric

由 Oh, H.J., Lin, J.Q., Suleiman, S.A.B., Lo, G.Q., Kwong, D.L., Chi, D.Z., Lee, S.J.
出版 2014

Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopy

由 Oh, H.J., Lin, J.Q., Lee, S.J., Dalapati, G.K., Sridhara, A., Chi, D.Z., Chua, S.J., Lo, G.Q., Kwong, D.L.
出版 2014