Radio-translucent 3-axis mechanical testing rig for the spine in micro-CT

بواسطة Si-Hoe, K.M., Teoh, S.H., Teo, J.
منشور في 2014

Relationship between CT intensity, micro-architecture and mechanical properties of porcine vertebral cancellous bone

بواسطة Teo, J.C.M., Si-Hoe, K.M., Keh, J.E.L., Teoh, S.H.
منشور في 2014

Correlation of cancellous bone microarchitectural parameters from microCT to CT number and bone mechanical properties

بواسطة Teo, J.C.M., Si-Hoe, K.M., Keh, J.E.L., Teoh, S.H.
منشور في 2014

Strain relaxed high quality silicon-germanium-on-insulator substrates formed by pulsed laser irradiation technology

بواسطة Wang, G.H., Toh, E.-H., Wang, X., Hoe, K.-M., Tripathy, S., Samudra, G.S., Yeo, Y.-C.
منشور في 2014

Sub 50nm strained n-FETs formed on silicon-germanium-on-insulator substrates and the integration of silicon source/drain stressors

بواسطة Wang, G.H., Toh, E.-H., Hoe, K.-M., Tripathy, S., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
منشور في 2014

Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressors

بواسطة Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Zhu, M., Hoe, K.-M., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C.
منشور في 2014

Strain enhancement in spacerless N-channel FinFETs with silicon-carbon source and drain stressors

بواسطة Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Zhu, M., Hoe, K.-M., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C.
منشور في 2014

Strained silicon-germanium-on-insulator N-MOSFETs featuring lattice mismatched source/drain stressor and high-stress silicon nitride liner

بواسطة Wang, G.H., Toh, E.-H., Toh, Hoe, K.M., Tripathy, S., Balakurnar, S., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
منشور في 2014

Strained p-channel FinFETs with extended Π-shaped silicon-germanium source and drain stressors

بواسطة Tan, K.-M., Liow, T.-Y., Lee, R.T.P., Hoe, K.M., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
منشور في 2014

Novel extended-Pi shaped silicon - germanium source/drain stressors for strain and performance enhancement in p-channel tri-gate fin-type field-effect transistor

بواسطة Tan, K.-M., Liow, T.-Y., Lee, R.T.P., Zhu, M., Hoe, K.-M., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
منشور في 2014

Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealing

بواسطة Wang, G.H., Toh, E.-H., Wang, X., Tripathy, S., Osipowicz, T., Chan, T.K., Hoe, K.-M., Balakumar, S., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
منشور في 2014

Polycaprolactone-20% Tricalcium Phosphate Scaffolds in Combination With Platelet-Rich Plasma for the Treatment of Critical-Sized Defects of the Mandible: A Pilot Study

بواسطة Rai, B., Ho, K.H., Lei, Y., Si-Hoe, K.-M., Jeremy Teo, C.-M., Yacob, K.b., Chen, F., Ng, F.-C., Teoh, S.H.
منشور في 2014

Nickel-aluminum alloy silicides with high aluminum content for contact resistance reduction and integration in n-channel field-effect transistors

بواسطة Koh, A.T.-Y., Lee, R.T.-P., Lim, A.E.-J., Lai, D.M.-Y., Chi, D.-Z., Hoe, K.-M., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
منشور في 2014

A high-stress liner comprising diamond-like carbon (DLC) for strained p-channel MOSFET

بواسطة Tan, K.-M., Zhu, M., Fang, W.-W., Yang, M., Liow, T.-Y., Lee, R.T.P., Hoe, K.M., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
منشور في 2014

A new liner stressor with very high intrinsic stress (> 6 GPa) and low permittivity comprising diamond-like carbon (DLC) for strained p-channel transistors

بواسطة Tan, K.-M., Zhu, M., Fang, W.-W., Yang, M., Liow, T.-Y., Lee, R.T.P., Hoe, K.M., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
منشور في 2014

Source/drain-extension-last process for incorporating in situ doped lattice-mismatched extension stressor for enhanced performance in SOI N-FET

بواسطة Wong, H.-S., Ang, K.-W., Chan, L., Hoe, K.-M., Tung, C.-H., Balasubramaniam, N., Weeks, D., Landin, T., Spear, J., Thomas, S.G., Samudra, G., Yeo, Y.-C.
منشور في 2014

Silicon-carbon stressors with high substitutional carbon concentration and in situ doping formed in source/drain extensions of n-channel transistors

بواسطة Wong, H.-S., Ang, K.-W., Chan, L., Hoe, K.-M., Tung, C.-H., Balasubramanian, N., Weeks, D., Bauer, M., Spear, J., Thomas, S.G., Samudra, G., Yeo, Y.-C.
منشور في 2014

Ge-rich (70%) SiGe nanowire MOSFET fabricated using pattern-dependent Ge-condensation technique

بواسطة Jiang, Y., Singh, N., Liow, T.Y., Loh, W.Y., Balakumar, S., Hoe, K.M., Tung, C.H., Bliznetsov, V., Rustagi, S.C., Lo, G.Q., Chan, D.S.H., Kwong, D.L.
منشور في 2014

Novel epitaxial nickel aluminide-silicide with low Schottky-Barrier and series resistance for enhanced performance of dopant-segregated source/drain N-channel MuGFETs

بواسطة Lee, R.T.P., Liow, T.-Y., Tan, K.-M., Lim, A.E.-J., Ho, C.-S., Hoe, K.-M., Lai, M.Y., Osipowicz, T., Lo, G.-Q., Samudra, G., Chi, D.-Z., Yeo, Y.-C.
منشور في 2014

Strained n-channel FinFETs featuring in situ doped silicon-carbon (Si1-yCy) source and drain stressors with high carbon content

بواسطة Liow, T.-Y., Tan, K.-M., Weeks, D., Lee, R.T.P., Zhu, M., Hoe, K.-M., Tung, C.-H., Bauer, M., Spear, J., Thomas, S.G., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C.
منشور في 2014