Silicon-carbon stressors with high substitutional carbon concentration and in situ doping formed in source/drain extensions of n-channel transistors

• Main Authors: Wong, H.-S., Ang, K.-W., Chan, L., Hoe, K.-M., Tung, C.-H., Balasubramanian, N., Weeks, D., Bauer, M., Spear, J., Thomas, S.G., Samudra, G., Yeo, Y.-C.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Article
• 出版: 2014
• 主題: In situ phosphorous-doped; Series resistance; Strain; Thermal budget
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/83023
• 機構: National University of Singapore

10.1109/LED.2008.920274