Advanced contact technology for MOSFETs: Integration of new materials for series resistance reduction

بواسطة Yeo, Y.-C., Lee, R.T.-P.
منشور في 2014

Platinum germanosilicide as source/drain contacts in P-channel fin field-effect transistors (FinFETs)

بواسطة Lee, R.T.P., Chi, D.Z., Yeo, Y.-C.
منشور في 2014

Schottky barrier height modulation of nickeldysprosium-alloy germanosilicide contacts for strained P-FinFETs

بواسطة Sinha, M., Lee, R.T.P., Chor, E.F., Yeo, Y.-C.
منشور في 2014

Contact resistance reduction technology using aluminum implant and segregation for strained p-FinFETs with silicongermanium source/drain

بواسطة Sinha, M., Lee, R.T.P., Chor, E.F., Yeo, Y.-C.
منشور في 2014

Ultra high-stress liner comprising diamond-like carbon for performance enhancement of p-channel multiple-gate transistors

بواسطة Tan, K.-M., Yang, M., Liow, T.-Y., Lee, R.T.P., Yeo, Y.-C.
منشور في 2014

Achieving sub-0.1 ev hole schottky barrier height for NiSiGe on SiGe by aluminum segregation

بواسطة Sinha, M., Lee, R.T.P., Lohani, A., Mhaisalkar, S., Chor, E.F., Yeo, Y.-C.
منشور في 2014

Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films

بواسطة Lim, P.S.Y., Lee, R.T.P., Sinha, M., Chi, D.Z., Yeo, Y.-C.
منشور في 2014

Modification of molybdenum gate electrode work function via (La-, Al-Induced) dipole effect at High-κ/SiO2 interface

بواسطة Lim, A.E.-J., Lee, R.T.P., Samudra, G.S., Kwong, D.-L., Yeo, Y.-C.
منشور في 2014

Novel rare-earth dielectric interlayers for wide NMOS work-function tunability in Ni-FUSI gates

بواسطة Lim, A.E.-J., Lee, R.T.P., Samudra, G.S., Kwong, D.-L., Yeo, Y.-C.
منشور في 2014

Current-voltage characteristics of Schottky barriers with barrier heights larger than the semiconductor band gap: The case of NiGen- (001) Ge contact

بواسطة Chi, D.Z., Lee, R.T.P., Chua, S.J., Lee, S.J., Ashok, S., Kwong, D.-L.
منشور في 2014

Full silicidation of silicon gate electrodes using nickel-terbium alloy for MOSFET applications

بواسطة Lim, A.E.-J., Lee, R.T.P., Tung, C.H., Tripathy, S., Kwong, D.-L., Yeo, Y.-C.
منشور في 2014

Single silicide comprising nickel-dysprosium alloy for integration in p- and n-FinFETs with independent control of contact resistance by aluminum implant

بواسطة Sinha, M., Lee, R.T.P., Devi, S.N., Lo, G.-Q., Eng, F.C., Yeo, Y.-C.
منشور في 2014

P-FinFETs with Al segregated NiSi/p+-Si source/drain contact junction for series resistance reduction

بواسطة Sinha, M., Lee, R.T.P., Devi, S.N., Lo, G.-Q., Chor, E.F., Yeo, Y.-C.
منشور في 2014

Integration of Al segregated NiSiGe/SiGe source/drain contact technology in p-FinFETs for drive current enhancement

بواسطة Sinha, M., Lee, R.T.P., Devi, S.N., Lo, G.-Q., Chor, E.F., Yeo, Y.-C.
منشور في 2014

The role of carbon and dysprosium in Ni[Dy]Si:C contacts for schottky-barrier height reduction and application in N-channel MOSFETs with Si:C source/drain stressors

بواسطة Lee, R.T.P., Koh, A.T.-Y., Tan, K.-M., Liow, T.-Y., Chi, D.Z., Yeo, Y.-C.
منشور في 2014

N-Channel (110)-sidewall strained FinFETs with silicon-carbon source and drain stressors and tensile capping layer

بواسطة Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Tung, C.-H., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C.
منشور في 2014

A new salicidation process with solid Antimony (Sb) segregation (SSbS) for achieving sub-0.1 eV effective schottky barrier height and parasitic series resistance reduction in N-cha...

بواسطة Wong, H.-S., Koh, A.T.-Y., Chin, H.-C., Lee, R.T.-P., Chan, L., Samudra, G., Yeo, Y.-C.
منشور في 2014

Diamond-like carbon (DLC) liner: A new stressor for P-channel multiple-gate field-effect transistors

بواسطة Tan, K.-M., Fang, W.-W., Yang, M., Liow, T.-Y., Lee, R.T.-P., Balasubramanian, N., Yeo, Y.-C.
منشور في 2014

Effectiveness of aluminum incorporation in nickel silicide and nickel germanide metal gates for work function reduction

بواسطة Lim, A.E.-J., Lee, R.T.P., Koh, A.T.Y., Samudra, G.S., Kwong, D.-L., Yeo, Y.-C.
منشور في 2014

Sulfur-induced PtSi:C/Si:C Schottky barrier height lowering for realizing N-channel FinFETs with reduced external resistance

بواسطة Lee, R.T.-P., Lim, A.E.-J., Tan, K.-M., Liow, T.-Y., Chi, D.Z., Yeo, Y.-C.
منشور في 2014