Effects of prolonged annealing on NiSi at low temperature (500°C)

Effects of prolonged annealing on NiSi at low temperature (500°C)

Journal of Electronic Materials

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書目詳細資料
Main Authors:	Anisur, M.R., Osipowicz, T., Chi, D.Z., Wang, W.D.
其他作者:	PHYSICS
格式:	Article
出版:	2014
主題:	Agglomeration Interface roughness Nickel monosilicide (NiSi) Prolonged annealing Thermal stability
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/96376
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	National University of Singapore

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