High performance Ge CMOS with novel InAlP-passivated channels for future sub-10 nm technology node applications

• Main Authors: Liu, B., Gong, X., Cheng, R., Guo, P., Zhou, Q., Owen, M.H.S., Guo, C., Wang, L., Wang, W., Yang, Y., Yeo, Y.-C., Wan, C.-T., Chen, S.-H., Cheng, C.-C., Lin, Y.-R., Wu, C.-H., Ko, C.-H., Wann, C.H.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Conference or Workshop Item
• 出版: 2014
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/83783

10.1109/IEDM.2013.6724700