Strained n-channel FinFETs featuring in situ doped silicon-carbon (Si1-yCy) source and drain stressors with high carbon content

• Main Authors: Liow, T.-Y., Tan, K.-M., Weeks, D., Lee, R.T.P., Zhu, M., Hoe, K.-M., Tung, C.-H., Bauer, M., Spear, J., Thomas, S.G., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Article
• 出版: 2014
• 主題: FinFET; In situ doped; Multiple-gate field-effect transistor (MuGFET); Silicon-carbon; Strain; Stress
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/83079

10.1109/TED.2008.928025