N-channel InGaAs field-effect transistors formed on germanium-on-insulator substrates

• Main Authors: Ivana, Subramanian, S., Owen, M.H.S., Tan, K.H., Loke, W.K., Wicaksono, S., Yoon, S.F., Yeo, Y.-C.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Article
• 出版: 2014
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/82748
• 機構: National University of Singapore

10.1143/APEX.5.116502