Raman and Rutherford backscattering analyses of cubic SiC thin films grown on Si by vertical chemical vapor deposition

Raman and Rutherford backscattering analyses of cubic SiC thin films grown on Si by vertical chemical vapor deposition

Thin Solid Films

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書目詳細資料
Main Authors:	Feng, Z.C., Tin, C.C., Hu, R., Williams, J.
其他作者:	PHYSICS
格式:	Article
出版:	2014
主題:	Chemical vapour deposition Raman scattering Rutherford backscattering spectroscopy Silicon carbide
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/53124
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	National University of Singapore

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