Study of silicon-carbide power semiconductor devices

• المؤلف الرئيسي: Ng, See Hong.
• مؤلفون آخرون: Tseng King Jet
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2011
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/45965
• المؤسسة: Nanyang Technological University

Silicon carbide (Si-C) has gained tremendous interest as a promising wide-bandgap material for high power and high temperature applications. Substantial progress has been made in the recent years in Si-C power device development. In this project, Si-C Junction Field Effect Transistors (JFET) is studied. Firstly, the normally-off Si-C JFET from the commercially manufacturer, SemiSouth, undergoes an investigation into the properties of high temperature and frequency application. The JFET is subjected to varying temperature parameters between 25oC and 175oC and analysis is carried out to validate with the manufacturer’s characteristics and performance. Finally, the circuit schematics are designed using simulation software, Ansoft Simplorer 8.0. On average, Si-C JFETs are in the normally-on state which generally not desirable for power switch. The Si-C JFET that is used for investigation in the test experiment is a normally-off state device. Thus, modelling of circuit is done to modify the Si-C JFET in Simplorer to a normally-off state during simulations. The simulation results are compared with the manufacture datasheet to resolve any discrepancies with respect to the data.