Energy efficient and high temperature power semiconductors : silicon carbide diode characterization

• المؤلف الرئيسي: Heng, Gary.
• مؤلفون آخرون: Tseng King Jet
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2009
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Power electronics
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/16760

The advantages Silicon Carbide (SiC) semiconductor materials have over conventional Silicon (Si) are of such significance that has resulted in the gradual replacement of current Si devices and their applications. To date, numerous research journals investigating the properties of SiC diodes have...