Development and characterization of gallium arsenide-based antimony-containing dilute nitride grown by molecular beam epitaxy
The fast growing demand for internet bandwidth has spurred the need for low cost optoelectronic devices working at the optical communication window of 1.3-1.55um. The wavelength range is important due to the minimum laser attenuation windows in a silica optical fiber. However, the high cost of the i...
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| 格式: | Theses and Dissertations |
| 語言: | English |
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2010
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| 在線閱讀: | https://hdl.handle.net/10356/41841 |
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| 機構: | Nanyang Technological University |
| 語言: | English |