Wicaksono, S., & Fatt, Y. S. (2010). Development and characterization of gallium arsenide-based antimony-containing dilute nitride grown by molecular beam epitaxy.
Chicago Style CitationWicaksono, Satrio, and Yoon Soon Fatt. Development and Characterization of Gallium Arsenide-based Antimony-containing Dilute Nitride Grown By Molecular Beam Epitaxy. 2010.
MLA引文Wicaksono, Satrio, and Yoon Soon Fatt. Development and Characterization of Gallium Arsenide-based Antimony-containing Dilute Nitride Grown By Molecular Beam Epitaxy. 2010.
警告:這些引文格式不一定是100%准確.