Development and characterization of gallium arsenide-based antimony-containing dilute nitride grown by molecular beam epitaxy

• المؤلف الرئيسي: Satrio Wicaksono
• مؤلفون آخرون: Yoon Soon Fatt
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2010
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/41841

The fast growing demand for internet bandwidth has spurred the need for low cost optoelectronic devices working at the optical communication window of 1.3-1.55um. The wavelength range is important due to the minimum laser attenuation windows in a silica optical fiber. However, the high cost of the i...