Effect of surface treatments on Cu/Ultra-low k interconnection technology

• المؤلف الرئيسي: Tan, Hwa Jin.
• مؤلفون آخرون: Lau, Wai Shing
• التنسيق: Theses and Dissertations
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/3363

Single damascene copper interconnect structures were fabricated. Cu/ultra-low-k (porous SiLKTM) interconnects were subjected to surface treatments to study the effects on the structural and electrical properties, including Fourier transform infrared spectroscopy, atomic force microscopy and electr...