Development of process technology for fabrication of 4H-SiC silicon carbide schottky barrier diodes

Development of process technology for fabrication of 4H-SiC silicon carbide schottky barrier diodes

In recent times, 4H-SiC has been at the center of power semiconductor device research due to its superior material properties such as large bandgap (Eg ~3.26 eV), high breakdown electric field (Ec ~3 MV/cm which is almost 10 times that of Si), high saturated electron velocity (~2.0×107 cm/s which is...

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書目詳細資料
主要作者:	Kumta Amit Sudhakar
其他作者:	Rusli
格式:	Theses and Dissertations
語言:	English
出版:	2009
主題:	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
在線閱讀:	https://hdl.handle.net/10356/19273
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	Nanyang Technological University
語言:	English

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