Fabrication and characterisation of Silicon-Germanium Schottky diode

• المؤلف الرئيسي: Tan, Oscar Aik Poh.
• مؤلفون آخرون: Tse, Man Siu
• التنسيق: Theses and Dissertations
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/3328

In this project, both the silicon and silicon germanium schottky barrier diode were fabricated and studied. Pt, Ti and W metal were investigated as schottky materials. Pt/n-Si, Ti/n-Si, W/n-Si, Pt/p-Si, Ti/p-Si and W/p-Si schottky diodes were fabricated and found to give good quality schottky diode...