Role of ex-situ HfO2 passivation to improve device performance and suppress X-ray-induced degradation characteristics of in-situ Si3N4/AlN/GaN MIS-HEMTs

• المؤلفون الرئيسيون: Dalapati, Pradip, Li, Hanchao, Arulkumaran, Subramaniam, Ng, Geok Ing
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2025
• الموضوعات: Engineering; X-ray-induced defect formation; Charge trapping
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/182502

The role of ex-situ HfO2 passivation in in-situ Si3N4/AlN/GaN-based metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) to improve the device performance and protect the device from severe degradation under high-energy X-ray irradiation has been investigated. Here, the root...