Effective suppression of current collapse in both E- and D-mode AlGaN/GaN HEMTs on Si by [(NH4)2Sx] passivation

بواسطة Vicknesh, Sahmuganathan, Arulkumaran, Subramaniam, Ng, Geok Ing
منشور في 2013

Investigation of self-heating effect on DC and RF performances in AlGaN/GaN HEMTs on CVD-Diamond

بواسطة Ranjan, Kumud, Arulkumaran, S., Ng, Geok Ing, Sandupatla, A.
منشور في 2020

Monolithic integration of heterojunction bipolar transistors and high electron mobility transistors

بواسطة Radhakrishnan, K., Ng, Geok Ing., Yoon, Soon Fatt.
منشور في 2008

High Johnson’s figure of merit (8.32 THz·V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on silicon

بواسطة Ranjan, Kumud, Arulkumaran, Subramaniam, Ng, Geok Ing, Vicknesh, Sahmuganathan
منشور في 2015

Temperature dependent characteristics of InAlN/GaN HEMTs for mm-wave applications

بواسطة Xing, Weichuan, Liu, Zhihong, Ng, Geok Ing, Palacios, Tomas
منشور في 2018

Compact true time delay line with partially shielded coplanar waveguide transmission lines

بواسطة Lim, Hong Yi, Ng, Geok Ing, Leong, Yoke Choy
منشور في 2013

Strategic research on RF and microwave

بواسطة Ng, Geok Ing, Lau, Wai Shing, Law, Choi Look
منشور في 2008

Role of ex-situ HfO2 passivation to improve device performance and suppress X-ray-induced degradation characteristics of in-situ Si3N4/AlN/GaN MIS-HEMTs

بواسطة Dalapati, Pradip, Li, Hanchao, Arulkumaran, Subramaniam, Ng, Geok Ing
منشور في 2025

A Compact Model for Generic MIS-HEMTs Based on the Unified 2DEG Density Expression

بواسطة Zhang, Junbin, Syamal, Binit, Zhou, Xing, Arulkumaran, Subramaniam, Ng, Geok Ing
منشور في 2016

Demonstration of AlGaN/GaN MISHEMT on Si with low-temperature epitaxy grown AlN dielectric gate

بواسطة Whiteside, Matthew, Arulkumaran, Subramaniam, Dikme, Yilmaz, Sandupatla, Abhinay, Ng, Geok Ing
منشور في 2021

A modular approach to design a full three-way 8 to 18 GHz MMIC active circulator

بواسطة Lim, Hong Yi, Ng, Geok Ing, Ang, Kian Sen, Leong, Yoke Choy
منشور في 2013

Characteristic temperature of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser

بواسطة Li, Xiang, Wang, Hong, Qiao, Zhongliang, Guo, Xin, Wang, Wanjun, Ng, Geok Ing, Liu, Chongyang
منشور في 2018

Temperature- and current-dependent repetition frequency of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser

بواسطة Li, Xiang, Wang, Hong, Qiao, Zhongliang, Guo, Xin, Wang, Wanjun, Ng, Geok Ing, Liu, Chongyang
منشور في 2018

InAlN/GaN HEMTs on Si With High fT of 250 GHz

بواسطة Xing, Weichuan, Liu, Zhihong, Qiu, Haodong, Ranjan, Kumud, Gao, Yu, Ng, Geok Ing, Palacios, Tomás
منشور في 2020

A hybrid GaN HEMT model merging artificial neural networks and ASM-HEMT for parameter precision and scalability

بواسطة Lu, Zhongzhiguang, Li, Hanchao, Xie, Hanlin, Zhuang, Yihao, Wang, Wensong, Ng, Geok Ing, Zheng, Yuanjin
منشور في 2025

High-responsivity modulation-doped AlGaAs/InGaAs thermopiles for uncooled IR-FPA utilizing integrated HEMT-MEMS technology

بواسطة Abe, Masayuki, Abe, Yuki, Kogushi, Noriaki, Ang, Kian Siong, Hofstetter, René, Wang, Hong, Ng, Geok Ing
منشور في 2013

GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates

بواسطة Deki, M., Nitta, S., Honda, Y., Amano, H., Sandupatla, Abhinay, Arulkumaran, Subramanian, Ng, Geok Ing, Ranjan, Kumud
منشور في 2019

Band alignment between GaN and ZrO2 formed by atomic layer deposition

بواسطة Ye, Gang, Wang, Hong, Arulkumaran, Subramaniam, Ng, Geok Ing, Li, Yang, Liu, Zhi Hong, Ang, Kian Siong
منشور في 2014

Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN

بواسطة Li, Yang, Ng, Geok Ing, Arulkumaran, Subramaniam, Ye, Gang, Liu, Zhi Hong, Ranjan, Kumud, Ang, Kian Siong
منشور في 2017

Enhancing the piezoelectric modulus of wurtzite AlN by ion beam strain engineering

بواسطة Fiedler, Holger, Leveneur, Jérôme, Mitchell, David R. G., Arulkumaran, Subramaniam, Ng, Geok Ing, Alphones, Arokiaswami, Kennedy, John
منشور في 2021