Investigation of self-heating effect on DC and RF performances in AlGaN/GaN HEMTs on CVD-Diamond

بواسطة Ranjan, Kumud, Arulkumaran, S., Ng, Geok Ing, Sandupatla, A.
منشور في 2020

High Johnson’s figure of merit (8.32 THz·V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on silicon

بواسطة Ranjan, Kumud, Arulkumaran, Subramaniam, Ng, Geok Ing, Vicknesh, Sahmuganathan
منشور في 2015

InAlN/GaN HEMTs on Si With High fT of 250 GHz

بواسطة Xing, Weichuan, Liu, Zhihong, Qiu, Haodong, Ranjan, Kumud, Gao, Yu, Ng, Geok Ing, Palacios, Tomás
منشور في 2020

GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates

بواسطة Deki, M., Nitta, S., Honda, Y., Amano, H., Sandupatla, Abhinay, Arulkumaran, Subramanian, Ng, Geok Ing, Ranjan, Kumud
منشور في 2019

Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN

بواسطة Li, Yang, Ng, Geok Ing, Arulkumaran, Subramaniam, Ye, Gang, Liu, Zhi Hong, Ranjan, Kumud, Ang, Kian Siong
منشور في 2017

Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si

بواسطة Liu, Siyu, Zhuang, Yihao, Li, Hanchao, Xie, Qingyun, Wang, Yue, Xie, Hanlin, Ranjan, Kumud, Ng, Geok Ing
منشور في 2024

Characterization of deep region trapping effects in AlN/GaN HEMTs with an AlGaN back barrier utilizing tri-state pulsed IV technique

بواسطة Zhuang, Yihao, Ranjan, Kumud, Xie, Qingyun, Xie, Hanlin, Li, Hanchao, Wang, Yue, Liu, Siyu, Ng, Geok Ing
منشور في 2024

Demonstration of submicron-gate AlGaN/GaN high-electron-mobility transistors on silicon with complementary metal-oxide-semiconductor-compatible non-gold metal stack

بواسطة Arulkumaran, Subramaniam, Ng, Geok Ing, Vicknesh, Sahmuganathan, Wang, Hong, Ang, Kian Siong, Kumar, Chandramohan Manoj, Teo, Khoon Leng, Ranjan, Kumud
منشور في 2015

In0.17Al0.83N/AlN/GaN triple T-shape Fin-HEMTs with gm=646 mS/mm, ION=1.03A/mm, IOFF=1.13 μA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 V

بواسطة Teo, Khoon Leng, Ng, Geok Ing, Ranjan, Kumud, Shoron, O. F., Arulkumaran, Subramaniam, Rajan, S., Dolmanan, S. B., Manoj Kumar, Chandra Mohan, Tripathy, S.
منشور في 2015

AlN/GaN/AlGaN-on-Si HEMT achieving 1.3 W/mm at 5 v for 5G FR2 handsets

بواسطة Li, Hanchao, Xie, Hanlin, Xie, Qingyun, Liu, Siyu, Wang, Yue, Wang, Yuxuan, Ranjan, Kumud, Zhuang, Yihao, Gong, Xiao, Ng, Geok Ing
منشور في 2025

Low voltage high-energy α-particle detectors by GaN-on-GaN Schottky diodes with record-high charge collection efficiency

بواسطة Sandupatla, Abhinay, Arulkumaran, Subramaniam, Ranjan, Kumud, Ng, Geok Ing, Murmu, Peter P., Kennedy, John, Nitta, Shugo, Honda, Yoshio, Deki, Manato, Amano, Hiroshi
منشور في 2020

Record low contact resistance for InAlN/GaN HEMTs on Si with non-gold metal

بواسطة Arulkumaran, Subramaniam, Ng, Geok Ing, Ranjan, Kumud, Kumar, Chandra Mohan Manoj, Foo, Siew Chuen, Ang, Kian Siong, Vicknesh, Sahmuganathan, Dolmanan, Surani Bin, Bhat, Thirumaleshwara, Tripathy, Sudhiranjan
منشور في 2015

Non-linear thermal resistance model for the simulation of high power GaN-based devices

بواسطة Garciá-Sánchez, S., Iñiguez-de-la-Torre, I., Pérez, S., Ranjan, Kumud, Agrawal, Manvi, Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Arulkumaran, Subramaniam, Ng, Geok Ing, González, T., Mateos, J.
منشور في 2022