Origin of the two-dimensional hole gas and criteria for its existence in the III-nitride heterostructures

由 Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K.
出版 2023

Structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy

由 Agrawal, M., Radhakrishnan, K., Dharmarasu, Nethaji, Ravikiran, Lingaparthi
出版 2013

In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobi...

由 Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Agrawal, Manvi
出版 2021

Effects of Si doping well beyond the Mott transition limit in GaN epilayers grown by plasma-assisted molecular beam epitaxy

由 Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Zheng, Y.
出版 2022

Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures—experimental evidence of the hole trap sta...

由 Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Huo, Lili
出版 2023

Growth instability of N-polar GaN on vicinal SiC substrate using plasma-assisted molecular beam epitaxy

由 Huo, Lili, Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K.
出版 2025

Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBE

由 Sun, Z. Z., Radhakrishnan, K., Agrawal, M., Dharmarasu, Nethaji
出版 2011

Ga-bilayer controlled AlGaN/GaN HEMT structure grown on Si by PA-MBE

由 Agrawal, M., Radhakrishnan, K., Sun, Z. Z., Dharmarasu, Nethaji
出版 2011

Strain states of AlN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si(111)

由 Ravikiran, L., Radhakrishnan, K., Agrawal, M., Munawar Basha, S., Dharmarasu, Nethaji
出版 2014

A study on Ga – Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy

由 Zheng, Y., Agrawal, Manvi, Dharmarasu, Nethaji, Radhakrishnan, K., Patwal, Shashank
出版 2020

Surface morphology evolution of N-polar GaN on SiC for HEMT heterostructures grown by plasma-assisted molecular beam epitaxy

由 Huo, Lili, Lingaparthi, Ravikiran, Dharmarasu, Nethaji, Radhakrishnan, K., Chan, Casimir
出版 2023

Stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy

由 Agrawal, Manvi, Ravikiran, Lingaparthi, Dharmarasu, Nethaji, Radhakrishnan, K., Karthikeyan, Giri Sadasivam, Zheng, Yuanjin
出版 2017

Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures

由 Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Ranjan, A., Seah, Alex Tian Long, Huo, Lili
出版 2021

Demonstration of AlGaN/GaN high-electron-mobility transistors on 100-mm-diameter Si(111) by ammonia molecular beam epitaxy

由 Dharmarasu, Nethaji, Radhakrishnan, K., Agrawal, M., Ravikiran, Lingaparthi, Arulkumaran, Subramaniam, Lee, Kenneth E., Ing, Ng Geok
出版 2013

Non-linear thermal resistance model for the simulation of high power GaN-based devices

由 Garciá-Sánchez, S., Iñiguez-de-la-Torre, I., Pérez, S., Ranjan, Kumud, Agrawal, Manvi, Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Arulkumaran, Subramaniam, Ng, Geok Ing, González, T., Mateos, J.
出版 2022

On the practical limitations for the generation of Gunn oscillations in highly doped GaN diodes

由 Garcia-Sanchez, S., Daher, M. Abou, Lesecq, M., Huo, Lili, Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Iniguez-De-La-Torre, I., Vasallo, B. G., Perez, S., Gonzalez, T., Mateos, J.
出版 2023

Studies on GaN based HEMT heterostructures on 100-mm silicon grown by molecular beam epitaxy

由 Ravikiran Lingaparthi
出版 2015