Transmission electron microscopy observation of CMOS devices of titanium self-aligned silicide technology with nitrogen (N+) implantation process

由 Jia, Y.M., Lim, C.W., Bourdillon, A.J., Boothroyd, C.
出版 2014

Surface smoothing of floating gates in flash memory devices via surface nitrogen and carbon incorporation

由 Cha, C.-L., Chor, E.-F., Gong, H., Bourdillon, A.J., Jia, Y.-M., Pan, J.-S., Zhang, A.-Q., Chan, L.
出版 2014

Evaluation of silicon nitride and silicon carbide as efficient polysilicon grain-growth inhibitors

由 Cha, C.L., Chor, E.F., Jia, Y.M., Bourdillon, A.J., Gong, H., Pan, J.S., Zhang, A.Q., Tang, S.K., Boothroyd, C.B.
出版 2014