Transmission electron microscopy observation of CMOS devices of titanium self-aligned silicide technology with nitrogen (N+) implantation process

by Jia, Y.M., Lim, C.W., Bourdillon, A.J., Boothroyd, C.
Published 2014

Surface smoothing of floating gates in flash memory devices via surface nitrogen and carbon incorporation

by Cha, C.-L., Chor, E.-F., Gong, H., Bourdillon, A.J., Jia, Y.-M., Pan, J.-S., Zhang, A.-Q., Chan, L.
Published 2014

Evaluation of silicon nitride and silicon carbide as efficient polysilicon grain-growth inhibitors

by Cha, C.L., Chor, E.F., Jia, Y.M., Bourdillon, A.J., Gong, H., Pan, J.S., Zhang, A.Q., Tang, S.K., Boothroyd, C.B.
Published 2014