Effect of defect sites in charge carrier mobility enhancement of hopping model
Charge carrier mobility in disorder materials was described by hopping model and the increasing in the mobility value of existing defect or impurity sites was investigated by Monte Carlo simulation of the rectangular hopping site. In the case of equal tunneling rate, the mobility value increases whe...
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| Main Authors: | , |
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| 格式: | Conference or Workshop Item |
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2018
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| 在線閱讀: | https://repository.li.mahidol.ac.th/handle/123456789/27545 |
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| 機構: | Mahidol University |