High resolution TEM and triple-axis XRD investigation into porous silicon formed on highly conducting substrates

• Main Authors: Wijesinghe, T.L.S.L., Li, S.Q., Breese, M.B.H., Blackwood, D.J.
• 其他作者: PHYSICS
• 格式: Article
• 出版: 2014
• 主題: Etching; Lattice parameters; Porous silicon; Transmission electron microscopy; Triple-axis X-ray diffraction
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/86399
• 機構: National University of Singapore

10.1016/j.electacta.2009.01.045